smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SD1760 features low v ce(sat) ,v ce(sat) = 0.5v (typical) (i c =2a,i b =0.2a). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5v collector current i c 3a collector current (pulse) * i cp 4.5 a collector power dissipation t c =25 p c 15 w junction temperature t j 150 storage temperature t stg -55to+150 * pw=100ms. electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base voltage bv cbo i c =50a 60 v collector-emitter voltage bv ceo i c =1ma 50 v emitter-base voltage bv ebo i e =50a 5 v collector cutoff current i cbo v cb =40v 1 a emitter cutoff current i ebo v eb =4v 1 a collector-emitter saturation voltage v ce(sat) i c =2a,i b =0.2a 0.5 1 v forward current transfer ratio h fe v ce =3v,i c =0.5a 82 390 transition frequency f t v ce =5v, i e = -500ma, f=30mhz 90 mhz output capacitance c ob v cb =10v, i e =0a, f=1mhz 40 pf h fe classification rank p q r h fe 82 180 120 270 180 390 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors product specification 4008-318-123
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